Diodes manufactured from silicon carbide are capable of high temperature operation to 400oC. This could be in a high temperature environment: down hole oil well logging, gas turbine engines, auto engines. Or, operation in a moderate environment at high power dissipation. Nuclear and space applications are promising as SiC is 100 times more resistant to radiation compared with silicon. SiC is a better conductor of heat than any metal. Thus, SiC is better than silicon at conducting away heat. Breakdown voltage is several kV. SiC power devices are expected to reduce electrical energy losses in the power industry by a factor of 100.
Article Extracted from Tony R. Kuphaldt Lessons In Electric Circuits — Volume III Chapter 3 under the terms and conditions of the CC BY License.